Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p -symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temper...

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Veröffentlicht in:Scientific reports 2015-11, Vol.5 (1), p.17053-17053, Article 17053
Hauptverfasser: Lee, Juwon, Subramaniam, Nagarajan Ganapathi, Agnieszka Kowalik, Iwona, Nisar, Jawad, Lee, Jaechul, Kwon, Younghae, Lee, Jaechoon, Kang, Taewon, Peng, Xiangyang, Arvanitis, Dimitri, Ahuja, Rajeev
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Sprache:eng
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Zusammenfassung:The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p -symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBi x O 1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K -edge, probing directly the spin polarization of the O(2 p ) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBi x O 1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBi x O 1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep17053