First-principles study of point defects at a semicoherent interface

Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. We show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single po...

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Veröffentlicht in:Scientific reports 2014-12, Vol.4 (1), p.7567-7567, Article 7567
Hauptverfasser: Metsanurk, E., Tamm, A., Caro, A., Aabloo, A., Klintenberg, M.
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Sprache:eng
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Zusammenfassung:Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. We show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single point defects do not delocalize, but remain compact near the interfacial plane in Cu-Nb multilayers. We give a simple qualitative explanation for this difference on the basis of the well known limited transferability of empirical potentials.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep07567