A novel self-refreshable capacitorless DRAM cell and its extended applications

A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write sp...

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Veröffentlicht in:	Solid-state electronics 2010-09, Vol.54 (9), p.985-990
Hauptverfasser:	Wang, Peng-Fei, Liu, Lei, Wu, Dongping, Zang, Song-Gan, Liu, Wei, Gong, Yi, Zhang, David Wei, Zhang, Shi-Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitorless DRAM Devices Diodes Dynamic random access memory Electronics Exact sciences and technology Feasibility Gates Image sensor Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories MOSFET Nondestructive testing Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information TECHNOLOGY TEKNIKVETENSKAP Transistors Tunneling FET
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Beschreibung
Zusammenfassung:	A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.
ISSN:	0038-1101 1879-2405 1879-2405
DOI:	10.1016/j.sse.2010.04.012