Compensation in boron-doped CVD diamond

Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures are also pre...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2008-09, Vol.205 (9), p.2190-2194
Hauptverfasser:	Gabrysch, Markus, Majdi, Saman, Hallén, Anders, Linnarsson, Margareta, Schöner, Adolf, Twitchen, Daniel, Isberg, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.up 72.20.My 73.40.Ei 81.05.Uw 85.30.Hi Charge carriers: generation, recombination, lifetime, trapping, mean free paths Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Materials science Physics TECHNOLOGY TEKNIKVETENSKAP Teknisk materialvetenskap
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Zusammenfassung:	Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures are also presented in this context. Evaluation of the compensating donor (ND) and acceptor concentrations (NA) show that in certain samples very low compensation ratios (ND/NA below 10–4) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319
DOI:	10.1002/pssa.200879711