Photo-dissociation of hydrogen passivated dopants in gallium arsenide

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociatio...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2002, Vol.186 (1), p.234-239, Article 234
Hauptverfasser: Tong, L, Larsson, J.A, Nolan, M, Murtagh, M, Greer, J.C, Barbe, M, Bailly, F, Chevallier, J, Silvestre, F.S, Loridant-Bernard, D, Constant, E, Constant, F.M
Format: Artikel
Sprache:eng
Schlagworte:
Gallium arsenide
Hydrogen passivation
Photo-dissociation
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Zusammenfassung:A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As–H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si–H and C–H bonds.
ISSN:0168-583X
1872-9584
1872-9584
0168-583X
DOI:10.1016/S0168-583X(01)00949-1