Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τS in monolayer graphene, while the spin diffusion coefficient D S is str...

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Veröffentlicht in:	Nano letters 2012-03, Vol.12 (3), p.1498-1502
Hauptverfasser:	Maassen, Thomas, van den Berg, J. Jasper, IJbema, Natasja, Fromm, Felix, Seyller, Thomas, Yakimova, Rositza, van Wees, Bart J
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Compounds, Inorganic - chemistry Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization - methods Devices Diffusion coefficient Diffusion in nanoscale solids Diffusion in solids Epitaxial growth Epitaxy Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphene Graphite - chemistry Hanle precession Macromolecular Substances - chemistry Materials science Materials Testing Molecular Conformation Monolayers Nanostructure Nanostructures - chemistry Nanostructures - ultrastructure Particle Size Physics Relaxation time Silicon Compounds - chemistry Specific materials Spin transport Surface Properties TECHNOLOGY TEKNIKVETENSKAP Transport Transport properties of condensed matter (nonelectronic)
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Zusammenfassung:	We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τS in monolayer graphene, while the spin diffusion coefficient D S is strongly reduced compared to typical results on exfoliated graphene. The increase of τS is probably related to the changed substrate, while the cause for the small value of D S remains an open question.
ISSN:	1530-6984 1530-6992 1530-6992
DOI:	10.1021/nl2042497