Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation

Knoop microhardness of 6H‐SiC layers grown by sublimation epitaxy was investigated. The microhardness‐load curves for all of the samples were measured and then used to extract the load‐independent microhardness values. The relationships of these values to the growth time and growth rate were studied...

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Veröffentlicht in:	Crystal research and technology (1979) 1999-09, Vol.34 (8), p.943-947
Hauptverfasser:	Kakanakova-Georgieva, A., Trifonova, E. P., Yakimova, R., MacMillan, M. F., Janzen, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology epitaxial layers Exact sciences and technology Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy microhardness NATURAL SCIENCES NATURVETENSKAP Physical properties of thin films, nonelectronic Physics silicon carbide sublimation growth Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Vapor phase epitaxy growth from vapor phase
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Zusammenfassung:	Knoop microhardness of 6H‐SiC layers grown by sublimation epitaxy was investigated. The microhardness‐load curves for all of the samples were measured and then used to extract the load‐independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness‐depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi‐layer and the substrate.
ISSN:	0232-1300 1521-4079 1521-4079
DOI:	10.1002/(SICI)1521-4079(199909)34:8<943::AID-CRAT943>3.0.CO;2-O