Optical recombination of ZnO nanowires grown on sapphire and Si substrates

ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two differen...

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Veröffentlicht in:Applied physics letters 2003-07, Vol.83 (1), p.165-167
Hauptverfasser: Zhao, Q. X., Willander, M., Morjan, R. E., Hu, Q-H., Campbell, E. E. B.
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Sprache:eng
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Zusammenfassung:ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two different transitions; one is related to the ZnO free exciton and the other is related to the free-to-bound transition. The bound state has a binding energy of about 124 meV. The results from optical measurements show that a high quality of ZnO nanowires grown on sapphire and Si substrates has been achieved.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1591069