Optical recombination of ZnO nanowires grown on sapphire and Si substrates
ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two differen...
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Veröffentlicht in: | Applied physics letters 2003-07, Vol.83 (1), p.165-167 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two different transitions; one is related to the ZnO free exciton and the other is related to the free-to-bound transition. The bound state has a binding energy of about 124 meV. The results from optical measurements show that a high quality of ZnO nanowires grown on sapphire and Si substrates has been achieved. |
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ISSN: | 0003-6951 1077-3118 1077-3118 |
DOI: | 10.1063/1.1591069 |