Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy

Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x∕GaAs interface is c...

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Veröffentlicht in:	Applied physics letters 2005-06, Vol.86 (26), p.261904
Hauptverfasser:	Izadifard, M., Mtchedlidze, T., Vorona, I., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	TECHNOLOGY TEKNIKVETENSKAP
Online-Zugang:	Volltext
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Zusammenfassung:	Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x∕GaAs interface is concluded for the alloys with x⩾0.5% based on (i) highly efficient PL upconversion observed in the N containing samples and (ii) appearance of a near-infrared PL emission attributed to the spatially indirect type II transitions. Compositional dependence of the conduction band offset at the Ga1−yInyNxP1−x∕GaAs interface is also estimated.
ISSN:	0003-6951 1077-3118 1077-3118
DOI:	10.1063/1.1952586