Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

We report a comparative study of the optical and structural properties of mass‐transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor–acceptor pair emission is observed from the mass‐transport regions with a distinctive intensity contrast between the exciton and donor–acceptor bands from mass‐transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass‐transport regions related to different growth modes.