Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN ‘template’ layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.35-38
Hauptverfasser: Valcheva, E, Paskova, T, Abrashev, M.V, Persson, P.Å.O, Paskov, P.P, Goldys, E.M, Beccard, R, Heuken, M, Monemar, B
Format: Artikel
Sprache:eng
Schlagworte:
Cross-disciplinary physics: materials science
rheology
Doping distribution
Exact sciences and technology
GaN
HVPE
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Strain
TECHNOLOGY
TEKNIKVETENSKAP
Vapor phase epitaxy
growth from vapor phase
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN ‘template’ layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (
ISSN:0921-5107
1873-4944
1873-4944
DOI:10.1016/S0921-5107(00)00676-0