Fast growth of high quality GaN

We have grown bulk‐like GaN with a thickness up to 335 μm on 2″ sapphire substrates in a vertical HVPE reactor with a bottom‐fed design. A very high growth rate of 250 μm/h is reached with high crystalline quality of the grown material. The low temperature PL spectra show the free A‐exciton line at 3.483 eV and rather narrow I2 lines with FWHM of 1–2 meV indicating high crystalline quality and low doping concentration. This HVPE‐GaN has the potential to provide lattice‐matched and thermally‐matched substrates for further epitaxial growth of high quality GaN with a low dislocation density for advanced heterostructure devices. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)