Influence of dislocation density on photoluminescence intensity of GaN

The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different d...

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Veröffentlicht in:Journal of crystal growth 2005-05, Vol.278 (1), p.406-410
Hauptverfasser: Fälth, J.F., Gurusinghe, M.N., Liu, X.Y., Andersson, T.G., Ivanov, I.G., Monemar, B., Yao, H.H., Wang, S.C.
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Sprache:eng
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Zusammenfassung:The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5×10 8 to 3×10 10 cm −2. Carrier concentration was measured by capacitance–voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5×10 8–1×10 10 cm −2, and carrier concentrations 4×10 16–1×10 18 cm −3.
ISSN:0022-0248
1873-5002
1873-5002
DOI:10.1016/j.jcrysgro.2005.01.010