Investigation of ZnO as a perspective material for photonics

Emissive properties of ZnO are of great interests in terms of the UV LED device design. The persistent “green” luminescence due to deep defect is an obstacle for obtaining an intense UV emission, expected from ZnO. We report the positive role of thermally diffused H toward quenching the defect emiss...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2008-01, Vol.205 (1), p.144-149
Hauptverfasser:	Khranovskyy, V., Yazdi, G. R., Lashkarev, G., Ulyashin, A., Yakimova, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.80.Ba 68.37.Hk 73.61.Ga 78.60.Hk Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Ii-vi semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics TECHNOLOGY TEKNIKVETENSKAP
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Zusammenfassung:	Emissive properties of ZnO are of great interests in terms of the UV LED device design. The persistent “green” luminescence due to deep defect is an obstacle for obtaining an intense UV emission, expected from ZnO. We report the positive role of thermally diffused H toward quenching the defect emission in ZnO. It is suggested that hydrogen passivates defects responsible for DLE, resulting in efficient near band edge luminescence. As‐grown ZnO/SiNx:H/Si films, deposited at 350 °C demonstrate intense narrow peaks of UV emission at 380 nm and a ratio of emission intensities, NBE/DLE ≈ 42. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319 1862-6319
DOI:	10.1002/pssa.200776838