Enhancement in ellipsometric thin film sensitivity near surface plasmon resonance conditions

Ellipsometry used in internal reflection mode exhibits enhanced thin film sensitivity if operated close to surface plasmon resonance conditions. Compared to conventional ellipsometry, the changes in the ellipsometric parameter Δ are several orders of magnitude larger. Here, the origin of this large...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2008-04, Vol.205 (4), p.817-820
Hauptverfasser:	Arwin, H., Poksinski, M., Johansen, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	07.60.Fs 71.45.Gm 78.20.Ci 78.68.+m 87.14.E Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Metals and metallic alloys NATURAL SCIENCES NATURVETENSKAP Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Surface and interface electron states
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Zusammenfassung:	Ellipsometry used in internal reflection mode exhibits enhanced thin film sensitivity if operated close to surface plasmon resonance conditions. Compared to conventional ellipsometry, the changes in the ellipsometric parameter Δ are several orders of magnitude larger. Here, the origin of this large sensitivity is discussed by analysing thin film approximations of the complex reflectance ratio. It is found that the thickness sensitivity in Δ is proportional to the inverse of the difference between the intrinsic and the radiation‐induced damping of the surface plasmons. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319 1862-6319
DOI:	10.1002/pssa.200777899