Coexistence of type-I and type-II band lineups in Cd(Te,Se)∕ZnSe quantum-dot structures

The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD’s), induced primarily by the...

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Veröffentlicht in:Applied physics letters 2006-09, Vol.89 (12)
Hauptverfasser: Toropov, A. A., Sedova, I. V., Lyublinskaya, O. G., Sorokin, S. V., Sitnikova, A. A., Ivanov, S. V., Bergman, J. P., Monemar, B., Donatini, F., Si Dang, Le
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Sprache:eng
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Zusammenfassung:The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD’s), induced primarily by the 14% lattice mismatch between CdTe and ZnSe. The emission spectrum of the structure is the superposition of a relatively narrow luminescence line originating from CdSe-enriched type-I QD’s and a broad band attributed to the emission of an ultrathin ZnTeSe∕ZnSe layer with type-II band lineup, formed in between the QD’s.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.2355439