Coexistence of type-I and type-II band lineups in Cd(Te,Se)∕ZnSe quantum-dot structures
The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD’s), induced primarily by the...
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Veröffentlicht in: | Applied physics letters 2006-09, Vol.89 (12) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD’s), induced primarily by the 14% lattice mismatch between CdTe and ZnSe. The emission spectrum of the structure is the superposition of a relatively narrow luminescence line originating from CdSe-enriched type-I QD’s and a broad band attributed to the emission of an ultrathin ZnTeSe∕ZnSe layer with type-II band lineup, formed in between the QD’s. |
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ISSN: | 0003-6951 1077-3118 1077-3118 |
DOI: | 10.1063/1.2355439 |