Non-stoichiometry and non-homogeneity in InN

It is shown that the wide variation of apparent band‐gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band‐gap between 1.8 and 1.0 eV that is not due to the Moss‐Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non‐homogenity and non‐stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the Moss‐Burstein effect will have to be reassessed for InN. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)