Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate

Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate

Dilute-nitride Ga 0.44 In 0.56 N y P 1 − y alloys with y = 0 - 0.02 , grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination...

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Veröffentlicht in:Applied physics letters 2005-05, Vol.86 (22), p.222110-222110-3
Hauptverfasser: Vorona, I. P., Mchedlidze, T., Izadifard, M., Buyanova, I. A., Chen, W. M., Hong, Y. G., Xin, H. P., Tu, C. W.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter physics
Fysik
Halvledarfysik
Kondenserade materiens fysik
NATURAL SCIENCES
NATURVETENSKAP
Physics
Semiconductor physics
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Zusammenfassung:Dilute-nitride Ga 0.44 In 0.56 N y P 1 − y alloys with y = 0 - 0.02 , grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.1943487