High stability and luminescence efficiency in donor–acceptor neutral radicals not following the Aufbau principle

With their unusual electronic structures, organic radical molecules display luminescence properties potentially relevant to lighting applications; yet, their luminescence quantum yield and stability lag behind those of other organic emitters. Here, we designed donor–acceptor neutral radicals based o...

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Veröffentlicht in:Nature materials 2019-09, Vol.18 (9), p.977-984
Hauptverfasser: Guo, Haoqing, Peng, Qiming, Chen, Xian-Kai, Gu, Qinying, Dong, Shengzhi, Evans, Emrys W., Gillett, Alexander J., Ai, Xin, Zhang, Ming, Credgington, Dan, Coropceanu, Veaceslav, Friend, Richard H., Brédas, Jean-Luc, Li, Feng
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Sprache:eng
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Zusammenfassung:With their unusual electronic structures, organic radical molecules display luminescence properties potentially relevant to lighting applications; yet, their luminescence quantum yield and stability lag behind those of other organic emitters. Here, we designed donor–acceptor neutral radicals based on an electron-poor perchlorotriphenylmethyl or tris(2,4,6-trichlorophenyl)methyl radical moiety combined with different electron-rich groups. Experimental and quantum-chemical studies demonstrate that the molecules do not follow the Aufbau principle: the singly occupied molecular orbital is found to lie below the highest (doubly) occupied molecular orbital. These donor–acceptor radicals have a strong emission yield (up to 54%) and high photostability, with estimated half-lives reaching up to several months under pulsed ultraviolet laser irradiation. Organic light-emitting diodes based on such a radical emitter show deep-red/near-infrared emission with a maximal external quantum efficiency of 5.3%. Our results provide a simple molecular-design strategy for stable, highly luminescent radicals with non-Aufbau electronic structures. Organic radical molecules violating the Aufbau principle are shown to reach high luminescence quantum yield and photostability, with potential applications for deep-red and near-infrared light-emitting sources.
ISSN:1476-1122
1476-4660
1476-4660
DOI:10.1038/s41563-019-0433-1