The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

The origin and the formation mechanism of a surface morphological defect in 4H‐SiC epilayers are reported. The defect appears on the surface of an epilayer as an inclined line‐like feature at an angle of ±80° to the step‐flow direction [ 11 2 ¯ 0 ] . The defect is confirmed to originate from a threading screw dislocation intersecting the surface and its orientation is controlled by the sign of the Burgers vector of the dislocation. The defect forms through the interaction of local spiral growth associated with threading screw dislocations and step‐flow growth related to the substrate offcut. The defect mainly appears in the epilayers grown through chloride‐based chemistry, where in situ surface preparation of the substrate is performed in H2 + HCl at a relatively high temperature. The origin and formation mechanism of inclined line‐like defect in 4H‐SiC epilayer are reported. The defect appears at an angle of ±80° to the step‐flow direction and does not lead to any structural disorder in the epilayer. Threading screw dislocations in the substrate are found to be the origin whereas the sign of the Burgers vector determines its orientation.