Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

•A transfer of high quality 3C-SiC-on-Si to 3C-SiC-on-SiC was developed.•A subsequent growth of the transferred seeds was conducted.•Layers of up to 850μm thickness and an area of up to 11cm2 were grown.•A retainable quality without polytype changes, DPBs or APBs was achieved.•No increase of the amount of protrusions during subsequent growth can be observed. We have developed a transfer process of 3C-SiC-on-Si (100) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [100] direction resulting in large area crystals (up to ≈11cm2) with a thickness of up to approximately 850μm. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.