Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)

Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02   cm 2 / V s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inver...

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Veröffentlicht in:Applied physics letters 2011-05, Vol.98 (20), p.203301-203301-3
Hauptverfasser: Roelofs, W. S. C., Mathijssen, S. G. J., Bijleveld, J. C., Raiteri, D., Geuns, T. C. T., Kemerink, M., Cantatore, E., Janssen, R. A. J., de Leeuw, D. M.
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Sprache:eng
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Zusammenfassung:Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02   cm 2 / V s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date.
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.3589986