High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics

Low‐bandgap CH3NH3(PbxSn1–x)I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State‐of‐the‐art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heteroj...

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Veröffentlicht in:	Advanced materials (Weinheim) 2017, Vol.29 (2), p.np-n/a
Hauptverfasser:	Zhao, Baodan, Abdi‐Jalebi, Mojtaba, Tabachnyk, Maxim, Glass, Hugh, Kamboj, Varun S., Nie, Wanyi, Pearson, Andrew J., Puttisong, Yuttapoom, Gödel, Karl C., Beere, Harvey E., Ritchie, David A., Mohite, Aditya D., Dutton, Siân E., Friend, Richard H., Sadhanala, Aditya
Format:	Artikel
Sprache:	eng
Schlagworte:	Architecture Circuits Electric potential Electric vehicles Energy conversion efficiency Heterojunctions high mobility perovskites lead–tin perovskite PV low‐bandgap perovskites Materials science Optoelectronics Perovskites Photonic band gaps Photovoltaic cells Solar cells Urbach energy Voltage
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Zusammenfassung:	Low‐bandgap CH3NH3(PbxSn1–x)I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State‐of‐the‐art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (100 cm2 V−1 s−1) intrinsic carrier mobilities.
ISSN:	0935-9648 1521-4095 1521-4095
DOI:	10.1002/adma.201604744