Memristive devices based on solution-processed ZnO nanocrystals

We present a memristive device fabricated using low‐cost solution‐processed colloidal ZnO nanocrystals. Taking advantage of the large surface area of ZnO nanocrystals, we find that an oxygen depletion region can be naturally formed by chemical interaction between an Al electrode and the ZnO nanocrystals. Strong electrical hysteresis, history‐dependent conductance, and sweep‐rate‐dependent current–voltage (J–V) curves are observed in our devices. The resistance can be modified between ∼1 and ∼104 Ω cm2, which is promising for application in non‐volatile memory devices and in low‐cost organic circuits, where typical feature sizes are about 10–100 µm and the circuit current is low.