Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for SolutionProcessed Optoelectronic Devices

Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for SolutionProcessed Optoelectronic Devices

A method to deposit NiO x thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiO x films exhibit high work functions, excellent optical transparency, and flat surface features. The NiO x thin films are employed as hole-t...

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Veröffentlicht in:Advanced energy materials 2014-04, Vol.4 (6)
Hauptverfasser: Bai, Sai, Cao, Motao, Jin, Yizheng, Dai, Xinliang, Liang, Xiaoyong, Ye, Zhizhen, Li, Min, Cheng, Jipeng, Xiao, Xuezhang, Wu, Zhongwei, Xia, Zhouhui, Sun, Baoquan, Wang, Ergang, Mo, Yueqi, Gao, Feng, Zhang, Fengling
Format: Artikel
Sprache:eng
Schlagworte:
TECHNOLOGY
TEKNIKVETENSKAP
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Zusammenfassung:A method to deposit NiO x thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiO x films exhibit high work functions, excellent optical transparency, and flat surface features. The NiO x thin films are employed as hole-transport interlayers in organic solar cells and polymer light-emitting diodes, exhibiting superior electrical properties
ISSN:1614-6840
1614-6832
DOI:10.1002/aenm.201301460