High-power Q-switched Nd:YAG laser mounted in a silicon microbench

A high-power Q-switched Nd:YAG/Cr:YAG laser mounted in a silicon microbench is presented. It reaches an average output power well above 2 W and the pulse width is in the order of 1.4 ns . The use of microstructure silicon carriers provides efficient thermal control, compact integration and alignment...

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Veröffentlicht in:	Optics and laser technology 2004-07, Vol.36 (5), p.383-385
Hauptverfasser:	Evekull, D., Rydholm, J., Bjurshagen, S., Bäcklin, L., Kindlundh, M., Kjellberg, L., Koch, R., Olson, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge coupled devices Diode-pumped lasers Doped-insulator lasers and other solid state lasers Doping (additives) Exact sciences and technology Fundamental areas of phenomenology (including applications) Fysik Laser diode pumped Laser optical systems: design and operation Laser pulses Lasers Lasers diode-pumped Micromachining Microstructure Microstructure fabrication NATURAL SCIENCES NATURVETENSKAP Neodymium lasers Optics Photolithography Physics Pumping (laser) Q switched lasers Q-switched Q-switching Scanning electron microscopy Silicon
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A high-power Q-switched Nd:YAG/Cr:YAG laser mounted in a silicon microbench is presented. It reaches an average output power well above 2 W and the pulse width is in the order of 1.4 ns . The use of microstructure silicon carriers provides efficient thermal control, compact integration and alignment of active and passive optical components.
ISSN:	0030-3992 1879-2545 1879-2545
DOI:	10.1016/j.optlastec.2003.10.011