High reliability, high yield, high modulation bandwidth, low threshold current 1.55 μm MQW laser by new in-situ etching technique

For the first time, to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new technological process.

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Bibliographische Detailangaben
Hauptverfasser:	Bertone, Daniele, Campi, Roberta, Fang, Ruiyi yi, Meliga, Marina, Morello, G., Murgia, S., Paoletti, Roberto
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Condensed matter physics Electric currents Etching Fysik Halvledarfysik In-situ etching techniques Kondenserade materiens fysik NATURAL SCIENCES NATURVETENSKAP Physics Semiconducting indium phosphide Semiconductor physics Threshold current
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	For the first time, to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new technological process.
DOI:	10.1109/ECOC.1998.732443