Structure and bonding at the CaF2/Si (111) interface

High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomical...

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Veröffentlicht in:	Applied physics letters 1986-03, Vol.48 (9), p.596-598
Hauptverfasser:	HIMPSEL, F. J, HILLEBRECHT, F. U, HUGHES, G, JORDAN, J. L, KARLSSON, U. O, MCFEELY, F. R, MORAR, J. F, RIEGER, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.
ISSN:	0003-6951 1077-3118 1077-3118
DOI:	10.1063/1.96478