Supercritical drying process for high aspect-ratio HSQ nano-structures

Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR i...

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Veröffentlicht in:	Microelectronic engineering 2006-04, Vol.83 (4), p.1124-1127
Hauptverfasser:	Wahlbrink, T., Küpper, Daniel, Georgiev, Y.M., Bolten, J., Möller, M., Küpper, David, Lemme, M.C., Kurz, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Aspect ratio Electronics Exact sciences and technology High-resolution electron beam lithography HSQ Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Supercritical resist drying
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Beschreibung
Zusammenfassung:	Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.
ISSN:	0167-9317 1873-5568 1873-5568
DOI:	10.1016/j.mee.2006.01.026