Nickel-silicide process for ultra-thin-body SOI-MOSFETs

A self-aligned nickel-silicide process to reduce parasitic source and drain resistances in ultra-thin-body silicon-on-insulator (UTB-SOI)-MOSFETs is investigated. An optimized nickel-silicide process sequence including nickel sputter deposition, rapid thermal diffusion and compatible silicon nitride...

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Veröffentlicht in:Microelectronic engineering 2005-12, Vol.82 (3), p.497-502
Hauptverfasser: Schmidt, M., Mollenhauer, T., Gottlob, H.D.B., Wahlbrink, T., Efavi, J.K., Ottaviano, L., Cristoloveanu, S., Lemme, M.C., Kurz, H.
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Sprache:eng
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Zusammenfassung:A self-aligned nickel-silicide process to reduce parasitic source and drain resistances in ultra-thin-body silicon-on-insulator (UTB-SOI)-MOSFETs is investigated. An optimized nickel-silicide process sequence including nickel sputter deposition, rapid thermal diffusion and compatible silicon nitride (Si 3N 4) spacers is demonstrated in UTB-SOI n-MOSFETs. Transistor on-currents and source/drain-resistivity are extracted from output and transfer characteristics and compared for various device layer thicknesses from 80 nm down to 15 nm. On-currents are improved up to a factor of 100 for the thinnest transistors by the introduction of self-aligned NiSi. Front and back gate interface qualities are extracted to evaluate their potential impact on mobility and on-currents specifically for ultra-thin devices.
ISSN:0167-9317
1873-5568
1873-5568
DOI:10.1016/j.mee.2005.07.049