Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100 × 100 μ m 2 pixel sizes and low noise constant ( K 1 / f ) value of 4.4 × 10 −...

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Veröffentlicht in:	Applied physics letters 2010-11, Vol.97 (22), p.223507-223507-2
Hauptverfasser:	Radamson, H. H., Kolahdouz, M., Shayestehaminzadeh, S., Farniya, A. Afshar, Wissmar, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALLOYS BACKSCATTERING BOLOMETERS CARBON ADDITIONS CHEMICAL ANALYSIS CHEMICAL COATING CHEMICAL VAPOR DEPOSITION COHERENT SCATTERING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH METHODS CRYSTALS DEPOSITION DIFFRACTION DOPED MATERIALS ELECTROMAGNETIC RADIATION ELECTRON MICROSCOPY ELEMENTS EPITAXY Fysik GERMANIUM ALLOYS GERMANIUM COMPOUNDS GERMANIUM SILICIDES IONIZING RADIATIONS MASS SPECTRA MATERIALS MEASURING INSTRUMENTS MICROSCOPY MONOCRYSTALS NANOSTRUCTURES NATURAL SCIENCES NATURVETENSKAP Physics QUANTUM WELLS RADIATIONS SCATTERING SEMICONDUCTOR DEVICES SEMICONDUCTOR MATERIALS SEMIMETALS SILICIDES SILICON SILICON ALLOYS SILICON COMPOUNDS SPECTRA SURFACE COATING THERMISTORS TRANSMISSION ELECTRON MICROSCOPY X RADIATION X-RAY DIFFRACTION
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Zusammenfassung:	SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100 × 100 μ m 2 pixel sizes and low noise constant ( K 1 / f ) value of 4.4 × 10 − 15 is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.
ISSN:	0003-6951 1077-3118 1077-3118
DOI:	10.1063/1.3524211