Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC
The electrical properties of oxides fabricated on n-type 3C-SiC (001) and 4H-SiC (0001) epilayers using an advanced oxidation process combining plasma enhanced deposition and rapid postoxidation steps have been investigated. Three gas atmospheres have been studied for the postoxidation steps: N2O, d...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2009-08, Vol.106 (4) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The electrical properties of oxides fabricated on n-type 3C-SiC (001) and 4H-SiC (0001) epilayers using an advanced oxidation process combining plasma enhanced deposition and rapid postoxidation steps have been investigated. Three gas atmospheres have been studied for the postoxidation steps: N2O, dry, and wet oxygen (H2O). In comparison, additional oxides using postannealing in pure N2 have been fabricated. The implementation of wet oxygen resulted in a significant decrease in the interface traps density, in a reduction of oxide fixed charges and in the increased breakdown field in the case of 3C-SiC. In the case of 4H-SiC the postoxidation in N2O is a superior postprocessing step. |
---|---|
ISSN: | 0021-8979 1089-7550 1089-7550 |
DOI: | 10.1063/1.3204646 |