Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC

The electrical properties of oxides fabricated on n-type 3C-SiC (001) and 4H-SiC (0001) epilayers using an advanced oxidation process combining plasma enhanced deposition and rapid postoxidation steps have been investigated. Three gas atmospheres have been studied for the postoxidation steps: N2O, d...

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Veröffentlicht in:Journal of applied physics 2009-08, Vol.106 (4)
Hauptverfasser: Esteve, R., Schöner, A., Reshanov, S. A., Zetterling, C.-M., Nagasawa, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:The electrical properties of oxides fabricated on n-type 3C-SiC (001) and 4H-SiC (0001) epilayers using an advanced oxidation process combining plasma enhanced deposition and rapid postoxidation steps have been investigated. Three gas atmospheres have been studied for the postoxidation steps: N2O, dry, and wet oxygen (H2O). In comparison, additional oxides using postannealing in pure N2 have been fabricated. The implementation of wet oxygen resulted in a significant decrease in the interface traps density, in a reduction of oxide fixed charges and in the increased breakdown field in the case of 3C-SiC. In the case of 4H-SiC the postoxidation in N2O is a superior postprocessing step.
ISSN:0021-8979
1089-7550
1089-7550
DOI:10.1063/1.3204646