Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

Low-frequency noise (LFN) of gate stacks with Tm 2 O 3 high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiO x /HfO 2 stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Olyaei, Maryam, Malm, B. Gunnar, Litta, Eugenio D., Hellstrom, Per-Erik, Ostling, Mikael
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Hafnium compounds
High K dielectric materials
high-k dielectric
interfacial layer
Logic gates
Low-frequency noise
MOSFET
Thulium silicate
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Low-frequency noise (LFN) of gate stacks with Tm 2 O 3 high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiO x /HfO 2 stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm 2 O 3 gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiO x /HfO 2 devices.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2014.6948835