Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type...
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Veröffentlicht in: | Journal of applied physics 2014-12, Vol.116 (21), p.214111 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 1011 eV−1 cm−2 were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate. |
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ISSN: | 0021-8979 1089-7550 1089-7550 |
DOI: | 10.1063/1.4903533 |