Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes

Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes

Light extraction from InGaN photonic crystal (PhC) light emitting diodes (LEDs) has been studied by scanning near‐field optical microscopy and time‐resolved photoluminescence. The observed patterns of the near‐field intensity are complex and do not correspond to the physical structure of the photoni...

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Veröffentlicht in:Physica status solidi. C 2012-07, Vol.9 (7), p.1664-1666
Hauptverfasser: Liuolia, Vytautas, Marcinkevičius, Saulius, Wang, Qin, Andersson, Jan, Kim, Sang-Mook, Baek, Jong Hyeob
Format: Artikel
Sprache:eng
Schlagworte:
InGaN
LED
photonic crystal
SNOM
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Zusammenfassung:Light extraction from InGaN photonic crystal (PhC) light emitting diodes (LEDs) has been studied by scanning near‐field optical microscopy and time‐resolved photoluminescence. The observed patterns of the near‐field intensity are complex and do not correspond to the physical structure of the photonic crystal. Comparison with conventional LEDs without the PhC showed that PhC not only improves the light extraction, but also makes the LED emission more homogeneous (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1634
1610-1642
1610-1642
DOI:10.1002/pssc.201100571