A hybrid model for the electrothermal behavior of semiconductor devices

We introduce a hybrid model for the electro‐thermal behavior of semiconductor heterostructures. It combines a model based on drift‐diffusion with thermistor type models in different subregions of the semiconductor device. The aim of this hybrid modeling approach is to be physically as accurate as necessary and at the same time as computationally efficient as possible. Our existence proof uses a regularization method, a priori estimates, and Schauder's fixed point theorem.