Structure and principal electrophysical properties of Ge1 − x-Six thin films

Structure and principal electrophysical properties of Ge1 − x-Six thin films

In the process of thermal treatment of deposited Ge 0.85 Si 0.15 films, a number of peculiarities were found related to the character of their conductivity. The films of Ge 0.85 Si 0.15 solid solutions are rather resistant to thermal quenching. It was shown experimentally that irradiation with elect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Surface engineering and applied electrochemistry 2009, Vol.45 (2), p.161-166
Hauptverfasser: Abbasov, Sh. M., Agaverdiieva, G. T., Baitsar, A. S., Faradzhova, U. F., Mekhdevi, G. M.
Format: Artikel
Sprache:eng
Schlagworte:
Engineering
Machines
Manufacturing
Operating Experience
Processes
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In the process of thermal treatment of deposited Ge 0.85 Si 0.15 films, a number of peculiarities were found related to the character of their conductivity. The films of Ge 0.85 Si 0.15 solid solutions are rather resistant to thermal quenching. It was shown experimentally that irradiation with electrons under an accelerating voltage enhances the crystallization in the films and lowers their electric conductivity.
ISSN:1068-3755
1934-8002
DOI:10.3103/S106837550902015X