Creating micron regions with modified luminescent properties and topology on CdSxSe1 − x films by laser annealing

Laser annealing of thin polycrystalline films of CdS x Se 1 − x solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharp...

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Veröffentlicht in:Technical physics letters 2012-06, Vol.38 (6), p.572-575
Hauptverfasser: Bratashov, D. N., Klimova, S. A., Serdobintsev, A. A., Malyar, I. V., Stetsyura, S. V.
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Sprache:eng
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Zusammenfassung:Laser annealing of thin polycrystalline films of CdS x Se 1 − x solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharply modified physical properties on a micron-precise scale makes the proposed technique a promising tool for the production of semi-conductor sensor chips.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378501206020X