Creating micron regions with modified luminescent properties and topology on CdSxSe1 − x films by laser annealing
Laser annealing of thin polycrystalline films of CdS x Se 1 − x solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharp...
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Veröffentlicht in: | Technical physics letters 2012-06, Vol.38 (6), p.572-575 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Laser annealing of thin polycrystalline films of CdS
x
Se
1 −
x
solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharply modified physical properties on a micron-precise scale makes the proposed technique a promising tool for the production of semi-conductor sensor chips. |
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ISSN: | 1063-7850 1090-6533 |
DOI: | 10.1134/S106378501206020X |