Structure and photoelectric properties of Si1 − xSnx epilayers

Epitaxial layers of n -type Si 1 − x Sn x (0 ≤ x ≤ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of p Si- n Si 1 − x Sn x (0 ≤ x ≤ 0.04) structures were studied at various temperatures. It is established that Si 0.96 Sn 0.04 films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the p Si- n Si 0.96 Sn 0.04 structure is shifted to longer wavelengths as compared to that of the p Si- n Si structure. The photosensitivity of the p Si- n Si 0.96 Sn 0.04 structure in the impurity absorption range depends on the temperature.