Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range

We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (Cd x Hg 1 − x Te) heteroepitaxial structures for the photo- and optoelectronic devices...

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Veröffentlicht in:	Technical physics letters 2009, Vol.35 (2), p.147-150
Hauptverfasser:	Izhnin, A. I., Izhnin, I. I., Mynbaev, K. D., Ivanov-Omskiĭ, V. I., Bazhenov, N. L., Smirnov, V. A., Varavin, V. S., Mikhailov, N. N., Sidorov, G. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Classical and Continuum Physics Physics Physics and Astronomy
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Zusammenfassung:	We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (Cd x Hg 1 − x Te) heteroepitaxial structures for the photo- and optoelectronic devices operating in the middle infrared range (3–5 μm). It is established that the annealing in mercury vapor is optimum for improving the photoluminescence characteristics in this range.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785009020151