Electrical conductivity and magnetic properties of La1 − xCaxMn1 − yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)
The temperature dependences of the magnetic susceptibility χ( T ) and the electrical resistivity ρ( T ) of ceramic samples of La 1 − x Ca x MnO 3 with x = 0.67 (LCMO) and La 1 − x Ca x Mn 1 − y Fe y O 3 with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10 5 G and the temp...
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Veröffentlicht in: | Physics of the solid state 2008, Vol.50 (1), p.63-70 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The temperature dependences of the magnetic susceptibility χ(
T
) and the electrical resistivity ρ(
T
) of ceramic samples of La
1 −
x
Ca
x
MnO
3
with
x
= 0.67 (LCMO) and La
1 −
x
Ca
x
Mn
1 −
y
Fe
y
O
3
with
x
= 0.67 and
y
= 0.05 (LCMFO) are investigated in magnetic fields
B
= 50–10
5
G and the temperature range
T
= 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures
T
CO
≈ 272 K for LCMO and
T
CO
≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers
p
eff
= 4.83 μ
B
(LCMO) and 4.77 μ
B
(LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for
T
<
T
CO
is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers
a
for LCMFO and
a
und
for LCMO is
a/a
und
= 0.88. |
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ISSN: | 1063-7834 1090-6460 |
DOI: | 10.1134/S1063783408010137 |