Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element

The effect of substrate temperature, As 2 and P 2 molecular flux densities, and growth rate on the composition of III-P x As 1 − x solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015, Vol.49 (2), p.157-165
Hauptverfasser: Emelyanov, E. A., Putyato, M. A., Semyagin, B. R., Feklin, D. F., Preobrazhensky, V. V.
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Sprache:eng
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