Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element
The effect of substrate temperature, As 2 and P 2 molecular flux densities, and growth rate on the composition of III-P x As 1 − x solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015, Vol.49 (2), p.157-165 |
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