Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element

The effect of substrate temperature, As 2 and P 2 molecular flux densities, and growth rate on the composition of III-P x As 1 − x solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results obtained are presented in the form of a kinetic model for describing the process of formation of the composition in the Group V sublattice of the III-P x As 1 − x solid solution upon molecular beam epitaxy. The model can be used for choosing the growth conditions of the III-P x As 1 − x (001) solid-solution layers of a specified composition.