Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3
Phase formation upon the interaction of thin Yb 1 − x Sm x Te ( x = 0.02) and As 2 Te 3 films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb 1 − x Sm x As 4 Te 7 phase is formed upon interaction of the thin films at a temperature of 473 K and the Y...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014, Vol.48 (11), p.1525-1526 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 48 |
| creator | Hajiyev, E. Sh |
| description | Phase formation upon the interaction of thin Yb
1 −
x
Sm
x
Te (
x
= 0.02) and As
2
Te
3
films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb
1 −
x
Sm
x
As
4
Te
7
phase is formed upon interaction of the thin films at a temperature of 473 K and the Yb
1−
x
Sm
x
As
2
Te
4
phase at 503 K. |
| doi_str_mv | 10.1134/S1063782614110116 |
| format | Article |
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1 −
x
Sm
x
Te (
x
= 0.02) and As
2
Te
3
films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb
1 −
x
Sm
x
As
4
Te
7
phase is formed upon interaction of the thin films at a temperature of 473 K and the Yb
1−
x
Sm
x
As
2
Te
4
phase at 503 K.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782614110116</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Fabrication ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Testing of Materials and Structures ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (11), p.1525-1526</ispartof><rights>Pleiades Publishing, Ltd. 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782614110116$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782614110116$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Hajiyev, E. Sh</creatorcontrib><title>Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Phase formation upon the interaction of thin Yb
1 −
x
Sm
x
Te (
x
= 0.02) and As
2
Te
3
films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb
1 −
x
Sm
x
As
4
Te
7
phase is formed upon interaction of the thin films at a temperature of 473 K and the Yb
1−
x
Sm
x
As
2
Te
4
phase at 503 K.</description><subject>Fabrication</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Testing of Materials and Structures</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNplUEtqwzAUFKWFpmkP0J0uoPY9SZaflyH0B4EWYgpdGdmWGofYDpYD6Q26zhF7ktpJd928ecwMMzCM3SLcISp9v0QwKiZpUCMCojljE4QEhNFxcj7-RolRv2RXIaxhsFCkJ-z9bWWD477tattXbcN32-H0K8erpnedLY5k6weqarivNnUYlKMhfIXe1fwjR_7zfeD7Zb1PnZgFmTp1zS683QR384dTlj4-pPNnsXh9epnPFiJgQr1QqJWnxJCVRrocSogTDbksLcVkQFtbEJYQxVQU2lMeKQ_kyhx0JItIqimTp9iw7arm03XZut11zdCYIWTjMNm_YdQvYNdVtA</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Hajiyev, E. Sh</creator><general>Pleiades Publishing</general><scope/></search><sort><creationdate>2014</creationdate><title>Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3</title><author>Hajiyev, E. Sh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-s198t-3143f8968a262eb0d07940b2da878604aac81d0578cc4f8b53f08edb0452c523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Fabrication</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Testing of Materials and Structures</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hajiyev, E. Sh</creatorcontrib><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hajiyev, E. Sh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2014</date><risdate>2014</risdate><volume>48</volume><issue>11</issue><spage>1525</spage><epage>1526</epage><pages>1525-1526</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Phase formation upon the interaction of thin Yb
1 −
x
Sm
x
Te (
x
= 0.02) and As
2
Te
3
films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb
1 −
x
Sm
x
As
4
Te
7
phase is formed upon interaction of the thin films at a temperature of 473 K and the Yb
1−
x
Sm
x
As
2
Te
4
phase at 503 K.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782614110116</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (11), p.1525-1526 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_springer_journals_10_1134_S1063782614110116 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Fabrication Magnetic Materials Magnetism Physics Physics and Astronomy Testing of Materials and Structures Treatment |
| title | Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3 |
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