Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3

Phase formation upon the interaction of thin films in the system Yb1 − xSmxTe-As2Te3

Phase formation upon the interaction of thin Yb 1 − x Sm x Te ( x = 0.02) and As 2 Te 3 films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb 1 − x Sm x As 4 Te 7 phase is formed upon interaction of the thin films at a temperature of 473 K and the Y...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014, Vol.48 (11), p.1525-1526
1. Verfasser: Hajiyev, E. Sh
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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Zusammenfassung:Phase formation upon the interaction of thin Yb 1 − x Sm x Te ( x = 0.02) and As 2 Te 3 films obtained through their simultaneous and successive evaporation is studied. It is shown that the Yb 1 − x Sm x As 4 Te 7 phase is formed upon interaction of the thin films at a temperature of 473 K and the Yb 1− x Sm x As 2 Te 4 phase at 503 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614110116