Study of the recombination process at crystallite boundaries in CuIn1 − xGaxSe2 (CIGS) films by microwave photoconductivity

The loss kinetics of photogenerated charge carriers in thin polycrystalline chalcopyrite CuIn 1− x Ga x Se 2 (CIGS) films has been studied by microwave photoconductivity (at 36 GHz). The films were synthesized using the ampoule method and three variants of physical vapor deposition with subsequent selenization: magnetron sputtering, thermal deposition, and modified thermal deposition with intermetallic precursors. The photoconductivity was excited by 8-ns nitrogen laser pulses with maximum intensity of 4 × 10 14 photons/cm per pulse. Measurements were performed in the temperature range 148–293 K. The photoresponse amplitude is found to depend linearly on the sizes of coherent-scattering regions in the film grains, which were calculated from X-ray diffraction data. The photoresponse decay obeys hyperbolic law. The photoresponse half-decay time increases with a decrease in both temperature and light intensity. It is shown that the recombination of free holes with trapped electrons is very efficient near the crystallite boundaries.