Growth and structure of epitaxial Pb1 − xMnxSe(Ga) films

Growth and structure of epitaxial Pb1 − xMnxSe(Ga) films

The growth and structure of Pb 1 − x Mn x Se (Ga) (N Ga = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe 1 − x S x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientatio...

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Veröffentlicht in:Crystallography reports 2009, Vol.54 (2), p.331-333
Hauptverfasser: Nuriyev, I. R., Gadzhiyev, M. B., Sadigov, R. M.
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Crystallography and Scattering Methods
Physics
Physics and Astronomy
Surface and Thin Films
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creator Nuriyev, I. R.
Gadzhiyev, M. B.
Sadigov, R. M.
description The growth and structure of Pb 1 − x Mn x Se (Ga) (N Ga = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe 1 − x S x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientation, reproducing the substrate orientation. The optimal conditions for obtaining photosensitive epitaxial films with perfect crystal structure are determined ( W 1/2 = 70–80″).
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subjects Crystallography and Scattering Methods
Physics
Physics and Astronomy
Surface and Thin Films
title Growth and structure of epitaxial Pb1 − xMnxSe(Ga) films
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