Growth and structure of epitaxial Pb1 − xMnxSe(Ga) films

The growth and structure of Pb 1 − x Mn x Se (Ga) (N Ga = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe 1 − x S x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientatio...

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Veröffentlicht in:	Crystallography reports 2009, Vol.54 (2), p.331-333
Hauptverfasser:	Nuriyev, I. R., Gadzhiyev, M. B., Sadigov, R. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallography and Scattering Methods Physics Physics and Astronomy Surface and Thin Films
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The growth and structure of Pb 1 − x Mn x Se (Ga) (N Ga = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe 1 − x S x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientation, reproducing the substrate orientation. The optimal conditions for obtaining photosensitive epitaxial films with perfect crystal structure are determined ( W 1/2 = 70–80″).
ISSN:	1063-7745 1562-689X
DOI:	10.1134/S1063774509020254