Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films

A nonvolatile memory cell prototype based on the effect of resistive switching in thin Hf x Al 1 − x O y oxide films grown by atomic layer deposition (ALD) with a Al depth-graded profile has been developed. This prototype imitates the arrangement of memory cells between the metallization layers of integral circuits. The obtained results are much superior to the parameters of conventional flash memory cells in increasing the reset speed and decreasing the reset voltage.