Electronic structure and exchange interaction in Ga1–xMnxAs and In1–xMnxSb magnetic semiconductors

We have calculated the electronic structure of Ga 1– x Mn x As and In 1– x Mn x Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4 s and Mn 3 d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s -electrons at a magnetic center due to single-center exchange s – d matrix elements. The magnitude of exchange interaction calculated using Hartree–Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data.